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Effects of hydrogen addition in nitrogen atmospheric pressure plasma on its optical and electrical properties and silicon-based deposits compositions

par Debrabandere, Delphine ;Vanden Eynde, Xavier;Reniers, François
Référence Journal of physics. Conference series (Online), 275, 012011
Publication Publié, 2011

Article révisé par les pairs

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Résumé :

Si-based coatings were deposited with a cold plasma jet (Plasmabrush® PB1 from Reinhausen lasma) at atmospheric pressure with nitrogen as main carrier gas and hexamethyldisilazane (HMDSN) as precursor. Effects of hydrogen addition on the plasma characteristics and the coatings compositions have been evidenced with optical emission spectroscopy (OES), power measurements and XPS in-depth analyses. The intensity evolution of the nitrogen line (at 315.9 nm) with the applied voltage has a sigmoid shape for the pure nitrogen plasma but a quite linear one with hydrogen addition (up to 3%). Based on OES spectra, the presence of the NH specie in the nitrogen-hydrogen plasmas has been evidenced (around 336.0 nm) but not in the pure nitrogen plasmas. Although the plasma power is similar for both gases, the nitrogen atomic concentrations in the films as evidenced by XPS were lower with the nitrogen-hydrogen plasmas than with the pure nitrogen plasmas indicating a chemical effect of the presence of hydrogen in the plasma.