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Study of CNx films deposited by ICP-CVD from N2/CCl4/H2 precursors

par Bulir, Jiri ;Delplancke, Marie-Paule
Référence TMS Annual Meeting(28.02.1999 - 04.03.1999: San Diego, United States), Surface Engineering: Science and Technology I, page (395-403)
Publication Publié, 1999

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Résumé :

Thin CNx films were deposited on silicon substrate by inductively coupled r.f. plasma chem. vapor deposition (ICP-CVD). A mixt. of N2/CCl4/H2 was used. Influence of deposition parameters on film quality and plasma properties was studied. Nature of gaseous species, electron temp. and plasma d. were obtained by optical emission spectroscopy and Langmuir probe measurements. Pressure, ratio of H2 to CCl4, substrate temp. and injected r.f. power were varied in the following ranges: p = 15-200 Pa, H2/CCl4 = 1-10, Ts = 100-400 °C, and P = 15-300 W. Film compn. was studied by AES before and after in-situ Ar ion sputtering. The N/C ratio varied in the range of 0.5-0.7. Chlorine contamination of the deposits was detected but could be reduced by optimizing the deposition conditions. Decrease of both nitrogen and chlorine concn. was obsd. after sputtering. Fourier transform IR spectroscopy (FTIR) was used for the detn. of chem. bonding. Presence of Hydrogen was confirmed by N-H stretching vibrational band at 3350 cm-1 and weak C=CH stretching band at 3050 cm-1. A group assigned to C=C and C=N was detected around 1650 cm-1 as well as a nitril C≡N group at 2220 cm-1. The surface morphol. of the films was studied by at. force microscopy.