par Tang, Xiaohui;Jonas, Alain M;Nysten, Bernard;Demoustier-Champagne, Sophie;Blondeau, Françoise;Prévot, Pierre-Paul ;Pampin, Rémi;Godfroid, Edmond ;Iñiguez, Benjamin;Colinge, Jean-Pierre;Raskin, Jean-Pierre;Flandre, Denis;Bayot, Vincent
Référence Biosensors & bioelectronics, 24, 12, page (3531-3537)
Publication Publié, 2009-08
Référence Biosensors & bioelectronics, 24, 12, page (3531-3537)
Publication Publié, 2009-08
Article révisé par les pairs
Résumé : | A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology. |