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In situ determination of indium/gallium composition in InxGa1-x nanodroplets on GaAs(1 1 1)A based on the complementarity between XPS and REELS

par Jouanneaud, Romain;Monier, Guillaume;Bideux, Luc;Pauly, Nicolas ;Robert-Goumet, Christine
Référence Applied surface science, 679, 161218
Publication Publié, 2025-01

Article révisé par les pairs

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Résumé :

This work provides a new tool based on the complementarity between X-ray Photoelectron Spectroscopy (XPS) and Reflection Electron Energy Loss Spectroscopy (REELS). More precisely, this study is focused on the in situ precise determination of indium and gallium composition of self-assembled InxGa1-x nanodroplets on GaAs(1 1 1)A substrate during the first stage of III-V quantum dots growth by droplet epitaxy. An XPS intensity model based on In4d and Ga3d core levels enables the estimation of the gallium/indium ratio within the droplets under the assumption of a homogeneous droplet. On the other hand, we develop a brand new decomposition methodology of loss probabilities curves obtained from REELS spectra for droplets deposited on a substrate. The energy of InxGa1-x bulk plasmon experimentally obtained and semi-empirically modelled allows to calculate from REELS the indium-gallium composition in the droplet. Comparison between these values obtained by both XPS and REELS provides information about In/Ga mixing to grow binary InxGa1-x nanodroplets. Their good agreement shows promising results for the growth of InxGa1-xN quantum dots by droplet epitaxy for a very large range of composition.