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TEM analysis of near‐coincidence grain boundaries in silicon

par Bary, Abdouraman;Nouet, Gérard;Delavignette, Pierre
Référence Journal of microscopy, 158, 3, page (403-414)
Publication Publié, 1990

Article révisé par les pairs

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Résumé :

High‐precision characterization of grain boundaries with a deviation from the ideal coincidence is presented. The analysis is based on the shift of Kikuchi lines at grain boundaries. The accuracy was controlled using Frank's relationship applied to intrinsic secondary dislocations which accommodate the orientation deviation. An application is presented to coincidences with Σ = 25 and 3 observed in polycrystalline silicon. 1990 Blackwell Science Ltd