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Electrical characterization of epitaxial Bi:2201 thin films deposited on MgO substrates using inverted cylindrical magnetron sputtering

par Pop, Aurel ;Ilonca, Gh;Mariana, P.O.P.;Deltour, Robert
Référence Modern physics letters B, 16, 4, page (127-133)
Publication Publié, 2002-02

Article révisé par les pairs

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Résumé :

Bi2.1Sr1.9CuOy thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates using inverted cylindrical DC magnetron sputtering with different partial pressures of oxygen in a sputtering gas. The behavior of the normal state resistivity function of temperature is strongly influenced by the composition of sputtering gas used in thin films synthesis. Near the transition to the superconducting state, electrical resistivity changes strongly from "metallic" to insulator (MI). The origin for the increase of electrical resistance was analyzed using some models for the localization of mobile carriers. A good linearity is obtained for 1n R as a function of Tα for α = 1/10 and for R as a function of 1n T. The last behavior agrees with the pinning and fragmentation of 1D stripes in CuO2 planes.