par Sundareswaran, Supriya
;Nowak, Michal G;Caporaletti, Federico
;Villanueva, Martin Eduardo;Gasser, Fabian;Losada Perez, Patricia
;Napolitano, Simone
;Schweicher, Guillaume
;Resel, Roland;Geerts, Yves 
Référence Crystal growth & design, 26, page (3946-3957)
Publication Publié, 2026-05-05
;Nowak, Michal G;Caporaletti, Federico
;Villanueva, Martin Eduardo;Gasser, Fabian;Losada Perez, Patricia
;Napolitano, Simone
;Schweicher, Guillaume
;Resel, Roland;Geerts, Yves 
Référence Crystal growth & design, 26, page (3946-3957)
Publication Publié, 2026-05-05
Article révisé par les pairs
| Résumé : | Substrate-inducedpolymorphism(SIP)representsapromisingstrategyfordirectingthecrystallizationpathwaysofactivepharmaceutical ingredients(APIs),yetitsapplicationtomolecularsystemsremainsrelativelylimited.Here,weexamineSIPinFenofibrate, focusingontheinfluenceofsubstratechemistryandsolutionconcentrationonthepolymorphicoutcome.Onpristinesilicone substrates with native silicon oxide (SiO2), the resulting polymorphic formwas primarily determined by solutionconcentration.LowsolutionconcentrationsfavortheconcomitantnucleationofmetastableFormIVandstableFormI,whilehigherconcentrations favor the stableFormI.Toexplore the roleof surfacechemistry, SiO2 substrateswere covalentlygraftedwithmonolayersofFenofibratederivatives,whichsignificantlyalteredthenucleationbehaviorandpolymorphselectioncomparedwiththepristineSiO2.Surfaces functionalizedwithmonofunctionalorganosilane-FenofibrateconsistentlypromotedexclusiveformationofFormI,whereasthosemodifiedwithpolyfunctionalorganosilane-FenofibratesupportedthecrystallizationofstableFormIaswellasmetastableFormsII, III, andIV,dependingonsolutionconcentrationandsurfacehydrophobicity.Thesefindingsdemonstratethat engineeredmolecular interfaces candirect crystallizationkinetics andpolymorph selection, establishingSIPas apowerfulapproachforstabilizingbothstableandmetastableAPI forms.Althoughnonewpolymorphswereobtained, theseresultsestablishthatgraftedmolecular interfacescanmodulateboththekineticsandoutcomeofAPIcrystallization.SIPthusrepresentsaversatilestrategyforselectivelystabilizingdesiredpolymorphsandtailoringcrystallizationprocesses throughrational surfacedesign. |



