par Mary Joy, Rani;Cherta Garrido, Miquel F.;Harb, Omar J. Y.;Jeuris, Hendrik;Rouzbahani, Rozita;D’Haen, Jan;Clemmen, Stéphane 
;Van Thourhout, Dries;Vanpoucke, Danny E. P.;Pobedinskas, Paulius;Haenen, Ken
Référence ACS Materials Letters, 2639-4979
Publication Publié, 2025-12-02
;Van Thourhout, Dries;Vanpoucke, Danny E. P.;Pobedinskas, Paulius;Haenen, KenRéférence ACS Materials Letters, 2639-4979
Publication Publié, 2025-12-02
Article révisé par les pairs
| Résumé : | Group IV color centers in diamond are promising single-photon emitters for quantum information processing and networking. Among them, the tin-vacancy (SnV) center stands out due to its long spin coherence times at cryogenic temperatures above 1 K. While SnV centers have been realized using various fabrication routes, their in situ formation via microwave plasma-enhanced chemical vapor deposition (MW PE CVD) remains relatively unexplored. In this study, SnV centers, identified by a zero-phonon line (ZPL) near 620 nm, were synthesized in nanocrystalline diamond and free-standing microcrystalline diamond using tin oxide (SnO2) as a dopant source at substrate temperatures of 750°C and 850°C. Photoluminescence measurements reveal that lowering the substrate temperature enhances both the ZPL intensity and spatial uniformity of SnV centers. These results highlight substrate temperature as a key parameter for controlling SnV incorporation during MW PE CVD growth and provide insights into optimizing fabrication strategies for diamond-based quantum technologies. |
