par Murzin, S.S. S.S.;Claus, Isabelle ;Jansen, Aloysius G. M.;Moshegov, Nicolai N.T.;Toropov, Aleksandr A.I.;Eberl, Karl
Référence Physical review. B, Condensed matter, 59, 11, page (7330-7333)
Publication Publié, 1999
Référence Physical review. B, Condensed matter, 59, 11, page (7330-7333)
Publication Publié, 1999
Article révisé par les pairs
Résumé : | It is shown that the observed quantum Hall effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional single-particle spectrum is induced by the electron-electron interaction. The Hall resistance Rxy of the thinnest sample reveals a wide plateau at small activation energy Ea=0.4 K found in the temperature dependence of the transverse resistance Rxx. The different minima in the transverse conductance Gxx of the different samples show a universal temperature dependence (logarithmic in a large range of rescaled temperatures T/T0) that is reminiscent of electron-electron-interaction effects in coherent diffusive transport. © 1999 The American Physical Society. |