par Radziunas, Mindaugas;Vladimirov, Andrei 
;Viktorov, Evgeny
Référence Proceedings of SPIE - The International Society for Optical Engineering, 7720, 77200X
Publication Publié, 2010
;Viktorov, Evgeny Référence Proceedings of SPIE - The International Society for Optical Engineering, 7720, 77200X
Publication Publié, 2010
Article révisé par les pairs
| Résumé : | We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented. © 2010 SPIE. |
