par Van Der Sande, Guy
;Peeters, Michael;Veretennicoff, Irina;Danckaert, Jan;Verschaffelt, Guy
;Balle, Salvador
Référence IEEE journal of quantum electronics, 42, 9, page (898-906), 01668273
Publication Publié, 2006-09


Référence IEEE journal of quantum electronics, 42, 9, page (898-906), 01668273
Publication Publié, 2006-09
Article révisé par les pairs
Résumé : | We discuss the effect of uniaxial planar stress on polarization switching in vertical-cavity surface-emitting lasers (VCSELs). The approach is based on an explicit form of a frequency-dependent complex susceptibility of the uniaxially stressed quantum-well semiconductor material. In this mesoscopic framework, we have taken cavity anisotropics, spin carrier dynamics, and thermal shift of the gain curve into account. In this way, we present a model that provides a global overview of the polarization switching phenomenon. The results are compared with experiments on an air-post VCSEL operating at 980 nm. © 2006 IEEE. |