par Van Der Sande, Guy ;Soriano, Miguel M.C.;Yousefi, Mirvais;Peeters, Michael;Danckaert, Jan;Verschaffelt, Guy ;Lenstra, Daan
Référence Applied physics letters, 88, 7
Publication Publié, 2006
Référence Applied physics letters, 88, 7
Publication Publié, 2006
Article révisé par les pairs
Résumé : | We find experimentally that the relaxation oscillation peak in the relative intensity noise spectrum of a semiconductor laser has a higher damping and lower frequency when we add low frequency noise to the pump current. The broadening of the relaxation oscillation peak with increasing carrier noise level is interpreted as an increase of the nonlinear gain compression with noise strength. © 2006 American Institute of Physics. |