par Lu, Weijie;Eyink, Kurt;Grazulis, Lawrence;Mitchel, William W.C.;Boeckl, John J.J.;Barbosa, Roland 
;Clarke, Edwina
Référence The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 116, 29, page (15342-15347)
Publication Publié, 2012-07
;Clarke, EdwinaRéférence The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 116, 29, page (15342-15347)
Publication Publié, 2012-07
Article révisé par les pairs
| Résumé : | The structural transition from a three-dimensional SiC lattice to a two-dimensional graphene sheet is a crucial element in the growth mechanism of graphene on SiC. An interfacial defective transition layer near the surface of the SiC substrate is believed to be an intermediate structure for graphene layer formation. The transition layer consists of SiO xC y, vacancies, and other defects in the SiC lattice, which result from Si evaporation via thermal degradation of the SiC lattice and oxidation reactions of residual oxygen and other oxygen containing molecules on the SiC surface at high temperatures. This partially oxidized and structurally degraded SiC lattice layer is formed at temperatures lower than the graphene growth temperature but then decomposes with increasing temperature, leading to graphene formation. Then, the growth mechanism for graphene on SiC (0001) in high vacuum consists of multiple steps, including Si removal by thermal decomposition and oxidation, collapsing of the near surface SiC lattice, conversion from sp 3 to sp 2 carbon, and an increase in the degree of low-dimensional graphitization. The proposed atomic scale mechanism is able to explain experimental phenomena in graphene/SiC structural growth, such as graphene coverage at step edges, growth environment effects, graphene domain size, and thickness variations. © 2012 American Chemical Society. |
