Articles dans des revues avec comité de lecture (55)
  1. 1. Ferrari, E., Pandolfi, L., Schweicher, G., Geerts, Y., Salzillo, T., Masino, M., & Venuti, E. (2024). Structural Order and Thermal Behavior of Ph-BTBT-10 Monolayer Phases. The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 128(10), 4258-4264. doi:10.1021/acs.jpcc.3c07365
  2. 2. Liu, J., Kabbadj, S., Liu, G., Silva De Moraes, L., Gbabode, G., Schweicher, G., Resel, R., & Geerts, Y. (2023). Accessing Selective Crystallization of ROY Polymorphs Using Directional Crystallization from the Melt. Crystal growth & design, 23(12), 8565-8574. doi:10.1021/acs.cgd.3c00595
  3. 3. Giannini, S., Di Virgilio, L., Bardini, M., Hausch, J., Geuchies, J., Zheng, W., Volpi, M., Elsner, J., Broch, K., Geerts, Y., Schreiber, F., Schweicher, G., Wang, H. I., Blumberger, J., Bonn, M., & Beljonne, D. (2023). Transiently delocalized states enhance hole mobility in organic molecular semiconductors. Nature materials, 22, 1361-1369. doi:10.1038/s41563-023-01664-4
  4. 4. Simatos, D., Jacobs, I. E., Dobryden, I., Nguyen, M., Savva, A., Venkateshvaran, D., Nikolka, M., Charmet, J., Spalek, L. L., Gicevičius, M., Zhang, Y., Schweicher, G., Howe, D. J., Ursel, S., Armitage, J., Dimov, I., Kraft, U., Zhang, W., Alsufyani, M., McCulloch, I., Owens, R. M., Claesson, P. M., Knowles, T. P. J., & Sirringhaus, H. (2023). Effects of Processing-Induced Contamination on Organic Electronic Devices. Small methods, 7(11), 2300476. doi:10.1002/smtd.202300476
  5. 5. Benshalom, N., Asher, M., Jouclas, R., Korobko, R., Schweicher, G., Liu, J., Geerts, Y., Hellman, O., & Yaffe, O. (2023). Phonon–Phonon Interactions in the Polarization Dependence of Raman Scattering. The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 127(36), 18099-18106. doi:10.1021/acs.jpcc.3c03850
  6. 6. Ferrari, E., Pandolfi, L., Schweicher, G., Geerts, Y., Salzillo, T., Masino, M., & Venuti, E. (2023). Interlayer Sliding Phonon Drives Phase Transition in the Ph-BTBT-10 Organic Semiconductor. Chemistry of materials, 35(15), 5777-5783. doi:10.1021/acs.chemmater.3c00209
  7. 7. Riederer, P., Devaux, F., Schweicher, G., Geerts, Y., & Kersting, R. (2023). Molecular semiconductors and the Ioffe–Regel criterion: A terahertz study on band transport in DBTTT. Applied physics letters, 123(3), 032103. doi:10.1063/5.0153710
  8. 8. Volpi, M., Jouclas, R., Liu, J., Liu, G., Catalano, L., McIntosh, N., Bardini, M., Gatsios, C., Modesti, F., Turetta, N., Beljonne, D., Cornil, J., Kennedy, A. R., Koch, N., Erk, P., Samorì, P., Schweicher, G., & Geerts, Y. (2023). Enantiopure Dinaphtho[2,3‐ b :2,3‐ f ]thieno[3,2‐ b ]thiophenes: Reaching High Magnetoresistance Effect in OFETs. Advanced Science, 10(26), 2301914. doi:10.1002/advs.202301914
  9. 9. Banks, P. A., D'Avino, G., Schweicher, G., Armstrong, J., Ruzié, C., Chung, J. W., Park, J.-I., Sawabe, C., Okamoto, T., Takeya, J., Sirringhaus, H., & Ruggiero, M. T. (2023). Untangling the Fundamental Electronic Origins of Non-Local Electron–Phonon Coupling in Organic Semiconductors. Advanced functional materials, 33(38), 2303701. doi:10.1002/adfm.202303701
  10. 10. Pandey, P., Fijahi, L., McIntosh, N., Turetta, N., Bardini, M., Giannini, S., Ruzié, C., Schweicher, G., Beljonne, D., Cornil, J., Samorì, P., Mas-Torrent, M., Geerts, Y., Modena, E., & Maini, L. (2023). From synthesis to device fabrication: elucidating the structural and electronic properties of C7-BTBT-C7. Journal of Materials Chemistry C, 11(22), 7345-7355. doi:10.1039/D3TC00434A
  11. 11. Asher, M., Bardini, M., Catalano, L., Jouclas, R., Schweicher, G., Liu, J., Korobko, R., Cohen, A., Geerts, Y., Beljonne, D., & Yaffe, O. (2023). A Mechanistic View On The Order-Disorder Phase Transition In Amphidynamic Crystals. The Journal of Physical Chemistry Letters, 14, 1570−1577. doi:10.1021/acs.jpclett.2c03316
  12. 12. Fijahi, L., Li, J., Tamayo, A., Volpi, M., Schweicher, G., Geerts, Y., & Mas-Torrent, M. (2023). High throughput processing of dinaphtho[2,3- b :2′,3′- f ]thieno[3,2- b ]thiophene (DNTT) organic semiconductors. Nanoscale, 15, 230-236. doi:10.1039/D2NR05625A
    13. << Précédent 1 2 3 4 5 6 7 8 Suivant >>