Articles dans des revues avec comité de lecture (62)
1.
Meena, R., Pandey, P., Zuffa, C., Brázda, P., Samolova, E., McIntosh, N., Volpi, M., Modesti, F., Gatsios, C., Turetta, N., Catalano, L., Choi, W., Seki, S., Cornil, J., Erk, P., Koch, N., Samorì, P., Maini, L., Schweicher, G., & Geerts, Y. (2025). Crystal Engineering in Oligorylenes: The Quest for Optimized Crystal Packing and Enhanced Charge Transport. Crystal growth & design. doi:10.1021/acs.cgd.5c001452.
Hagiwara, Y., Schweicher, G., Das, S., Hasebe, S., Asahi, T., Koshima, H., & Geerts, Y. (2025). Control of Polymorphism and Alignment in Photochromic Salicylideneaniline Crystals Grown by Directional Crystallization. Crystal growth & design, 25(7), 2090-2098. doi:10.1021/acs.cgd.4c017293.
Ruiz-Molina, S., Ricci, S., Martínez-Domingo, C., Ortiz-Aguayo, M. J., Pfattner, R., Schweicher, G., Geerts, Y., Salzillo, T., & Mas-Torrent, M. (2025). Influence of mechanical stress on flexible electrolyte-gated organic field-effect transistors. Journal of Materials Chemistry C, 13(9), 4807-4815. doi:10.1039/D4TC05403B4.
Venkateshvaran, D., Cervantes, M. T. R., Spalek, L. L., Hwang, K.-H., Pudzs, K., Rutkis, M., Schweicher, G., & Padilla-Longoria, P. (2024). Understanding the Thermoelectric Transport Properties of Organic Semiconductors through the Perspective of Polarons. Advanced devices & instrumentation, 5, a.0067. doi:10.34133/adi.00675.
Catalano, L., Sharma, R., Karothu, D. P., Saccone, M., Elishav, O., Chen, C., Juneja, N., Volpi, M., Jouclas, R., Chen, H.-Y., Liu, J., Liu, G., Gopi, E., Ruzié, C., Klimis, N., Kennedy, A. R., Vanderlick, K., McCulloch, I., Ruggiero, M. T., Naumov, P., Schweicher, G., Yaffe, O., & Geerts, Y. (2024). Toward On-Demand Polymorphic Transitions of Organic Crystals via Side Chain and Lattice Dynamics Engineering. Journal of the American Chemical Society, 146(46), 31911-31919. doi:10.1021/jacs.4c112897.
Simatos, D., Nikolka, M., Charmet, J., Spalek, L. L., Toprakcioglu, Z., Jacobs, I. E., Dimov, I. I., Schweicher, G., Lee, M. J., Fernández-Posada, C. C., Howe, D. J., Hakala, T. T., Roode, L. L., Pecunia, V., Sharp, T. H., Zhang, W., Alsufyani, M., McCulloch, I., Knowles, T. P. J., & Sirringhaus, H. (2024). Electrolyte‐gated organic field‐effect transistors with high operational stability and lifetime in practical electrolytes. SmartMat, 5, e1291. doi:10.1002/smm2.12918.
Ferrari, E., Pandolfi, L., Schweicher, G., Geerts, Y., Salzillo, T., Masino, M., & Venuti, E. (2024). Structural Order and Thermal Behavior of Ph-BTBT-10 Monolayer Phases. The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 128(10), 4258-4264. doi:10.1021/acs.jpcc.3c073659.
Liu, J., Kabbadj, S., Liu, G., Silva De Moraes, L., Gbabode, G., Schweicher, G., Resel, R., & Geerts, Y. (2023). Accessing Selective Crystallization of ROY Polymorphs Using Directional Crystallization from the Melt. Crystal growth & design, 23(12), 8565-8574. doi:10.1021/acs.cgd.3c0059510.
Giannini, S., Di Virgilio, L., Bardini, M., Hausch, J., Geuchies, J., Zheng, W., Volpi, M., Elsner, J., Broch, K., Geerts, Y., Schreiber, F., Schweicher, G., Wang, H. I., Blumberger, J., Bonn, M., & Beljonne, D. (2023). Transiently delocalized states enhance hole mobility in organic molecular semiconductors. Nature materials, 22, 1361-1369. doi:10.1038/s41563-023-01664-411.
Simatos, D., Jacobs, I. E., Dobryden, I., Nguyen, M., Savva, A., Venkateshvaran, D., Nikolka, M., Charmet, J., Spalek, L. L., Gicevičius, M., Zhang, Y., Schweicher, G., Howe, D. J., Ursel, S., Armitage, J., Dimov, I., Kraft, U., Zhang, W., Alsufyani, M., McCulloch, I., Owens, R. M., Claesson, P. M., Knowles, T. P. J., & Sirringhaus, H. (2023). Effects of Processing-Induced Contamination on Organic Electronic Devices. Small methods, 7(11), 2300476. doi:10.1002/smtd.20230047612.
Benshalom, N., Asher, M., Jouclas, R., Korobko, R., Schweicher, G., Liu, J., Geerts, Y., Hellman, O., & Yaffe, O. (2023). Phonon–Phonon Interactions in the Polarization Dependence of Raman Scattering. The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 127(36), 18099-18106. doi:10.1021/acs.jpcc.3c03850