par Delplancke, Marie-Paule 
;Powers, James M.;Vandentop, G. J.;Salmeron, Miquel J.;Somorjai, Gabor A.
Référence Journal of vacuum science & technology, 9, 3, page (450-455)
Publication Publié, 1991
;Powers, James M.;Vandentop, G. J.;Salmeron, Miquel J.;Somorjai, Gabor A.Référence Journal of vacuum science & technology, 9, 3, page (450-455)
Publication Publié, 1991
Article révisé par les pairs
| Résumé : | Silicon carbide films were deposited by plasma enhanced chemical vapor deposition utilizing monomethylsilane (CH3 SiH3). Silicon (100) and polycrystalline gold were used as substrates. A mass spectrometric analysis of the monomethylsilane plasma showed that the majority of the Si-C bonds were preserved in the gas phase. The composition, the density and morphology of the amorphous SiC:H (a:SiC:H) films were studied as a function of substrate temperature, composition of the ion flux bombarding the surface and the kinetic energy of these ions. The surface science techniques utilized for these investigations include x-ray photoelectron spectroscopy, Auger electron spectroscopy, scanning electron microscopy, Fourier transform infrared, and Raman spectroscopies. © 1991, American Vacuum Society. All rights reserved. |
