par Kiel, Friedbald 
;Cotarelo, Maria Sol ;Delplancke, Marie-Paule ;Winand, René
Référence Thin solid films, 270, 1-2, page (118-123)
Publication Publié, 1995-12
;Cotarelo, Maria Sol ;Delplancke, Marie-Paule ;Winand, René Référence Thin solid films, 270, 1-2, page (118-123)
Publication Publié, 1995-12
Article révisé par les pairs
| Résumé : | hin films of boron nitride are synthesized by two plasma-enhanced chemical vapour deposition techniques: inductively coupled r.f. plasma (13.56 MHz) and microwave plasma (2.45 GHz). We study the composition (impurity level, B N ratio), the proportion of c-BN phase in the films and other properties of those films as a function of various process parameters. Two boron and two nitrogen precursors are compared: trimethyl borazine and diborane, dini trogen and ammonia, respectively. The advantages and disadvantages of each combinations are presented. The deposition process is followed by optical emission spectroscopy. Adhesion is one of the main problems encountered for films containing c-BN. © 1995. |
