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Inductively coupled plasma and laser-induced chemical vapour deposition of thin carbon nitride films

par Popov, Cyril;Bulir, Jiri ;Ivanov, Borislav;Delplancke, Marie-Paule ;Kulisch, Wilhelm
Référence Surface & coatings technology, 116-119, page (261-268)
Publication Publié, 1999-09

Article révisé par les pairs

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Résumé :

Thin CNx films have been deposited on silicon substrates by inductively coupled plasma chemical vapour deposition (ICP-CVD) and by laser-induced chemical vapour deposition (LCVD) utilizing the focused beam of a copper bromide vapour laser. Different gas mixtures were used: CH4/N2 and CCl4/N2/H2 for ICP-CVD, and CCl4/NH3 for LCVD. Plasma properties (electron temperature, electron and ion densities, plasma potential) were studied by Langmuir probe and optical emission spectroscopy. The growth rates ranged up to 80nmmin-1 for ICP-CVD and 700μmmin-1 for LCVD. The surface morphology was studied using atomic force microscopy for ICP-CVD, and scanning electron microscopy for LCVD. Beside carbon and nitrogen, silicon and oxygen for LCVD and chlorine for ICP-CVD (in the case of the CCl4/N2/H2 system) was detected by Auger electron spectroscopy. Fourier transform infrared (FTIR) spectroscopy was used to determine the chemical bonding structure. Bands assigned to C=C and C=N (graphite-like domains) and to C-H bonds were detected in the films deposited by both processes. In addition, different bands attributed to other types of carbon nitride bonds or to due to the presence of impurity atoms were observed in the FTIR spectra of the CNx films deposited by the ICP-CVD and LCVD. The results of both deposition techniques were compared and discussed on the base of the processes peculiarities. © 1999 Elsevier Science S.A.