par Roelkens, Gunther;Dave, Utsav;Gassenq, Alban;Hattasan, Nannicha;Hu, Chen;Kuyken, Bart;Leo, François 
;Malik, Aditya;Muneeb, Muhammad;Ryckeboer, Eva M.P.;Uvin, Sarah;Hens, Zeger;Baets, Roel G. F.;Shimura, Yosuke;Gencarelli, Federica;Vincent, Benjamin;Loo, Roger;Van Campenhout, Joris;Cerutti, Laurent;Rodriguez, Jean Baptiste;Tournié, Eric;Chen, Xia;Nedeljkovic, Milos
Référence Proceedings of SPIE - The International Society for Optical Engineering, 8993, 899316
Publication Publié, 2014
;Malik, Aditya;Muneeb, Muhammad;Ryckeboer, Eva M.P.;Uvin, Sarah;Hens, Zeger;Baets, Roel G. F.;Shimura, Yosuke;Gencarelli, Federica;Vincent, Benjamin;Loo, Roger;Van Campenhout, Joris;Cerutti, Laurent;Rodriguez, Jean Baptiste;Tournié, Eric;Chen, Xia;Nedeljkovic, MilosRéférence Proceedings of SPIE - The International Society for Optical Engineering, 8993, 899316
Publication Publié, 2014
Article révisé par les pairs
| Résumé : | In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.. © 2014 SPIE |
