par Roelkens, Gunther;Dave, Utsav;Gassenq, Alban;Hattasan, Nannicha;Hu, Chen;Kuyken, Bart;Leo, François 
;Malik, Aditya;Muneeb, Muhammad;Ryckeboer, Eva M.P.;Sanchez, Dorian;Uvin, Sarah;Wang, Ruijun;Hens, Zeger;Baets, Roel G. F.;Shimura, Yosuke;Gencarelli, Federica;Vincent, Benjamin;Loo, Roger;Van Campenhout, Joris;Cerutti, Laurent;Rodriguez, Jean Baptiste;Tournié, Eric
Référence IEEE International Conference on Group IV Photonics, page (23-24), 6962009,
Publication Publié, 2014
;Malik, Aditya;Muneeb, Muhammad;Ryckeboer, Eva M.P.;Sanchez, Dorian;Uvin, Sarah;Wang, Ruijun;Hens, Zeger;Baets, Roel G. F.;Shimura, Yosuke;Gencarelli, Federica;Vincent, Benjamin;Loo, Roger;Van Campenhout, Joris;Cerutti, Laurent;Rodriguez, Jean Baptiste;Tournié, EricRéférence IEEE International Conference on Group IV Photonics, page (23-24), 6962009,
Publication Publié, 2014
Article révisé par les pairs
| Résumé : | In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 μm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors operating in the 2-3 μm wavelength range. GeSn is proposed as an appealing approach to monolithically integrated long-wavelength detectors. Finally, nonlinear optics in silicon waveguide circuits beyond the two-photon absorption threshold is explored. © 2014 IEEE. |
