par Buchal, Ch.;Delplancke, Jean-Luc 
;Wolff, Michel;Elfenthal, Lothar;Schultze, Joachim Walter
Référence Radiation effects and defects in solids, 114, 3, page (225-237)
Publication Publié, 1990-08
;Wolff, Michel;Elfenthal, Lothar;Schultze, Joachim WalterRéférence Radiation effects and defects in solids, 114, 3, page (225-237)
Publication Publié, 1990-08
Article révisé par les pairs
| Résumé : | TiO2layers on Ti have been formed by anodic polarization. Ion implantation on Pd +of 70 or 200 keV energy yields a doped amorphous oxide. Subsequent repassivation by anodization to potentials below the formation potential causes recrystallization. This recrystallization starts at the interface to the underlying metal, demonstrating for the first time solid phase epitaxial regrowth under the influence of an electrical field. In the amorphous phase the activation energy for ion migration is sufficiently lowered to result in three times thicker oxide layers than the original ones. During recrystallization also Pd ions start migrating towards the surface and dissolve into the electrolyte. © 1990, Taylor & Francis Group, LLC. All rights reserved. |
