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Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers

par Murzin, S.S. S.S.;Jansen, Aloysius G. M.;Claus, Isabelle
Référence Physical review letters, 92, 1, page (168021-168024)
Publication Publié, 2004-01

Article révisé par les pairs

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Résumé :

The existence of oscillations of the diagonal and Hall magnetoconductances due to topological scaling effects was discussed. Explicit expressions for the topological oscillations were compared with the experiment for thick disordered silicon doped GaAs layers. Oscillations were observed in the extreme quantum limit of the applied magnetic field in disordered GaAs layers. These oscillations had a thickness larger than the electron transport mean-free path and an amplitude much smaller than that predicted by the dilute instanton gas approximation method.