par Wolff, Michel;Schultze, Joachim Walter;Delplancke, Jean-Luc ;Buchal, Ch.;Elfenthal, Lothar
Référence Journal of electroanalytical chemistry and interfacial electrochemistry, 300, 1-2, page (283-293)
Publication Publié, 1991-02
Article révisé par les pairs
Résumé : 40 nm TiO2 layers on Ti have been formed by anodic polarization. Implantation of 200 keV Ti+ ions induces amorphization which depends on the temperature. Subsequent repassivation to potentials below the formation potential causes recrystallization and additional oxide growth. The activation energy for ion migration is lowered by implantation. The additional oxide growth differs after 200 keV Ti+ and 200 keV Pd+ implantation. The rate determining step is located at the interface Ti/TiO2. This gives for the first time an indication of the validity of the Mott model for the oxide growth on Ti. © 1991.